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| 古村雄二 | |
| 昭和２５年 | 北海道余市郡余市町うまれ |
| 昭和４３年 | 余市高等学校卒業 |
| 昭和４７年 | 東北大学工学部電子工学課卒業 松下電器産業（株）入社 |
| 昭和５４年 | 富士通（株）入社 半導体部門配属 結晶、配線技術、CVD装置、FeRAMの開発を担当 |
| 平成１３年 | （株）フィルテック設立（代表取締役） |
| Yuji Furumura was born in Yoichi-cho Hokkaido, Japan, in 1950.
He received Ph.D. degree in Electrical Engineering from Tohoku University, Sendai and joined Fujitsu Ltd. in 1979. In Fujitsu Ltd. He was engaged in development of high-volume Si-epi-tool, substrate specification, wiring technology and piloted FeRAM manufacturing. He left Fujitsu Ltd. and established Philtech Inc. in 2001. |
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| 西原晋治 | |
| 昭和５６年 | 京都大学理学部物理学科卒 |
| 昭和５８年 | 大阪大学基礎工学研究科物性物理卒 （株）日立製作所 半導体事業部入社 配線技術、スパッタ装置開発、DRAM,SRAM等量産移管業務従事 |
| 平成１０年 | STRJ 配線ワーキンググループ主査 |
| 平成１２年 | トレセンティテクノロジ（株）出向 300mm量産ライン立ち上げ |
| 平成１８年 | （株）ルネサステクノロジ退職 （株）フィルテック入社 |
| Shinji Nishihara received the B.S. degree in Physics from Kyoto University in 1981. He received the M.S. degree in Engineering Science in 1983 from Osaka University and joined Semiconductor Group of Hitachi Ltd. where he was in charge of process development of wiring and sputtering. He transferred the DRAM and SRAM technologies to production lines. He executed the chair in STRJ wiring working group in 1998. He was assigned to Trecenti Technologies to start up the 300-mm production in 2000. He left Renesas Technology Corp. and joined Philtech Inc. in 2006. | |
| 拝形英里 | |
| 昭和６１年 | 早稲田大学理工学部化学科卒業、日立製作所入社 ドライエッチプロセス・ＦｅＲＡＭ技術などの開発担当 ラムリサーチなどを経て |
| 平成１６年 | （株）フィルテック入社 |
| Eri Haikata graduated in Chemical Science at Waseda University in 1986 and joined Hitachi Ltd.. She was in charge of dry-etching and FeRAM development. She worked with Lam Research and a venture company. She joined Philtech Inc. in 2004 and has been in charge of application-specific-TEG supply. | |
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