Pattern	Wafer Size	Feature Size	Exposure	Mask Information	Product ID	Description	Schedule
ＭＩＴ８５４	200 mm	180 nm	ＫｒＦ	phil854	PF001	Cu-plated MIT854	on service
ＭＩＴ７５４	300 mm	180 nm	ＫｒＦ	ＫｒＦ	PF002	Cu-plated MIT854	on service
CMP Std.	300mm	150 nm	ＫｒＦ	phil-CMP Std	PF003	CMP development standard pattern	on service
Hole Line & Space	300 mm	80 nm	■	SL1	PX3005	80nm Holes and Trenches etched through 340nm PETEOS	Nov-05

Pattern	Wafer Size	Feature Size	Exposure	Mask Information	Product ID	Description	Schedule
ＭＩＴ７５４	300 mm	180 nm	KrF	phil854	PFR002	Photo resist pattern of 754	on service
Hole Line & Space	300 mm	80 nm	■	SL1	PR3005	80nm Holes and Trenches etched through Hard-mask on 240nm PETEOS	Nov-05

Product ID	Wafer Size	TEG	Antenna Material	Antenna Ratio	Damage to be evaluated	Schedule
PD2003	200 mm	MOS Capacitor	-	-	Oxide break down	On Service
		MOS Capacitor with Box Antenna	Gate Metal	2-1M
		MOS Capacitor with Comb Antenna	Gate Metal	0.02-500K 0.03-750K
		MOS Capacitor with Contact Antenna	Contact	1-5K
PD3001	300 mm	MOS Capacitor	-	-	Oxide break down	On Service
		MOS Capacitor with Box Antenna	Gate Metal	2-1M
		MOS Capacitor with Comb Antenna	Gate Metal	0.02-500K 0.03-750K
		MOS Capacitor with Contact Antenna	Contact	1-5K
PD3002 特性改良版	300 mm	MOS Capacitor	-	-	Oxide break down	On Service
		MOS Capacitor with Box Antenna	Gate Metal	2-1M
		MOS Capacitor with Comb Antenna	Gate Metal	0.02-500K 0.03-750K
		MOS Capacitor with Contact Antenna	Contact	1-5K
PD3003	300 mm	MOS Capacitor with BOX Antenna	Gate Metal	2K-1M	leakage current increase prior to break	on service
		MOS capacitor with Comb Antenna	Gate Metal	0.02-500K
				0.03-750K