1985年に出願された軸を傾けたシリコン基板にSiCをヘテロエピヤキシャル成長させる技術の実績を基にコンサルティングを開始しました。斜め基板の技術はLEDのヘテロ結晶成長に使用されています。
2011/09/09
ニュース
Si(111)斜め基板上へのSiCヘテロ結晶成長
SiC Hetero-crystal growth on off-axial (111) Si substrate
Philtech will do consulting based on heteroepitaxial growth experience of compound Semiconductors on off-axial substrate.
Technology references
- Origin of ‘off-axial substrate crystal growth ’ was described in Furumura's
doctoral thesis:
A mixed crystal system of ZnTe, ZnSe, and ZnS in 1978. - SiC Heteroepitaxial growth on an off-axial (111) Si substrate was filed by
Fujitsu Ltd. as a Japan Patent in 1985. - Paper of Heteroepitaxial β-SiC on off-axial Si substrate from a
SiHCl3-C3H8-H2 system was published in 1986.
Denshi Tsushin Gakkai Ronbunshi 1986-06, Vol.69-C, No.6; pp.705~714. - Translated paper in English was published in 1987.
Electronics and Communications in Japan Part2 Vol.70, No.5, 1987. - Paper of Heteroepitaxial β-SiC on Si was published in 1988.
Journal of the Electrochemical Society, Vol.135, No.5, May 1988. - US Airforce reported this off-axial SiC technology in 1993 with other
technologies of SiC and GaN in Japan. Three researchers in the report
won the Nobel Prize in 2014.
