Assembly Evaluation Wafers

Assembly Evaluation Wafers

ASSEMBLY EVALUATION WAFERS

Assembly evaluation wafers carry TEG (Test Element Group) patterns for evaluating semiconductor packaging materials and bonding processes. TEG refers to evaluation patterns used to check materials, processes, and the condition of electrical connections.

Philtech can discuss fabrication of assembly evaluation wafers, including interconnect patterns and connection specifications, based on the intended evaluation and your requirements.

Main Applications

  • Encapsulation and Filling MaterialsEvaluation of package-filling and underfill materials
  • Bonding MaterialsEvaluation of solder and bump materials
  • Assembly ProcessesEvaluation of bump formation and bonding processes
  • Electrical ConnectionsChecking continuity and changes in connection resistance

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Fabrication Example | Daisy-Chain TEG (PT035)

PT035 is a daisy-chain TEG fabricated by Philtech, consisting of PT035A and PT035B test chips with different interconnect patterns. When the two interconnect patterns are aligned and their loopback traces are joined through bump connections, multiple connections form a series path. The condition of the entire connection path can be checked by testing for continuity and changes in resistance.

Cross-Sectional Structure Example

Example cross-sectional structure on a white background, showing PT035B in the upper silicon region, PT035A in the lower silicon region, aluminum interconnects, and bump connections
Example cross-sectional structure of PT035B (upper) and PT035A (lower)

Common Specifications for PT035A / PT035B

ItemDetails
Pad pitch40 µm
Pad size20 µm
Interconnect width16 µm
Passivation opening size7 µm
UBM size15 µm

PT035A / PT035B Layouts

PT035A (8 mm × 8 mm)

GDS view of the entire 8 mm square PT035A A2 chip, with displayed layers 1–3 color-coded

PT035B (6 mm × 6 mm)

GDS view of the entire PT035B B2 chip before mirroring, shown as a 6 mm square at the same scale, with displayed layers 4–6 color-coded

Note: In addition to the chips shown above, the wafer also includes shunt chips with different bump counts.

SEM Observation After Bump Formation

SEM images of the surfaces after bump formation, showing NiAu bumps on PT035A on the left and SnAg bumps on PT035B on the right
These SEM (scanning electron microscope) images show the results after bump formation: nickel–gold (NiAu) bumps on PT035A on the left and tin–silver (SnAg) bumps on PT035B on the right.

Fabrication Example | TSV Interposer

Through-silicon electrodes are interconnects that pass through a silicon substrate, formed by filling TSVs (Through Silicon Vias) with conductive metals such as Cu.

The image below is a cross-sectional SEM of an example interposer in which Philtech formed TSV electrodes.

Cross-sectional SEM of an example interposer showing multiple TSV electrodes