Implementation Evaluation Wafers

What Are Assembly Assessment Wafers?

Assembly assessment wafers carry TEG (Test Element Group) patterns for assessing semiconductor packaging materials and bonding processes. A TEG is a test pattern used to assess materials, processes, and electrical connections.

Philtech can assess the feasibility of fabricating assembly assessment wafers, including interconnect patterns and connection specifications, based on the assessment objectives and customer requirements.

Main Applications

  • Encapsulation and Filling MaterialsAssessment of package filling and underfill materials
  • Bonding MaterialsAssessment of solder and bump materials
  • Assembly ProcessesAssessment of bump formation and bonding processes
  • Electrical ConnectionsAssessment of continuity and changes in connection resistance

Contact us to discuss fabrication of assembly assessment wafers.

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An example of an assembly assessment wafer fabricated by Philtech is shown below.

Daisy-Chain TEG (PT035)

PT035 is a daisy-chain TEG fabricated by Philtech for assembly assessment. Bonding PT035A and PT035B, which have different interconnect patterns, forms a daisy chain with multiple connections linked in series. Continuity and changes in resistance indicate the condition of the complete connection path.

Cross-Sectional Structure

Example cross-section on a white background showing PT035B in the upper silicon region, PT035A in the lower silicon region, aluminum interconnects, and bump connections
Example cross-section of PT035B (upper) and PT035A (lower)

Common Specifications

ItemSpecification
Pad pitch40 µm
Pad size20 µm
Interconnect width16um
Passivation opening size7 µm
UBM size15 µm

PT035A / PT035B Layouts

The interconnects on PT035A and PT035B are aligned so that the return paths connect through the bumps, forming a daisy chain in series.

PT035A (8 mm × 8 mm)

Full-chip GDS image of the 8 mm square PT035A A2 chip, with display layers 1~3 shown in different colors

PT035B (6 mm × 6 mm)

Full-chip GDS image of the PT035B B2 chip before mirroring, shown as a 6 mm square at the same scale, with display layers 4~6 shown in different colors

*The wafer also contains current-branching test chips with different bump counts, in addition to those shown above.

SEM Images After Bump Formation

The SEM (scanning electron microscope) images show the bumps after formation: nickel/gold (NiAu) bumps on PT035A on the left, and tin/silver (SnAg) bumps on PT035B on the right.

SEM image showing the surfaces after bump formation: NiAu bumps on PT035A on the left and SnAg bumps on PT035B on the right
SEM after bump formation: PT035A (left), NiAu bumps / PT035B (right), SnAg bumps

TSV Interposer

A TSV (Through Silicon Via) filled with a conductive metal such as Cu forms an electrical interconnect through a silicon substrate.

Philtech has experience fabricating TSV interconnects through silicon substrates.

Cross-sectional SEM of an interposer example showing multiple TSV interconnects