Research Achievements

An attempt to measure the speed of sound at ultra-low temperatures to determine the concentration of atomic vacancies in silicon wafers was made at Niigata University. Our company was responsible for manufacturing the SAW (Surface Acoustic Wave) devices needed for this purpose. A unique phenomenon of silicon softening near absolute zero due to the interaction of atomic vacancies was introduced in the paper.

In 1985, we successfully achieved heteroepitaxial growth of 3C-SiC on Si(111) substrates tilted by 4 degrees in the <211> direction. This technique of crystal growth on off-angle substrates has contributed to the commercialization of high-power devices using GaN and SiC materials.

We attempted to create an antenna on 0.15um cubic Si powder that resonates with close proximity high-frequency. By mixing high-frequency resonant powder into paint or similar substances, it is possible to create paints that resonate at different frequencies. We considered the application of using this as an ID paint.

A direction for 3D integration by stacking wafers or chips on top of each other has been indicated. For the development of this technology, our company has designed and manufactured the necessary test wafers. Here is an example of such a wafer.

When high-temperature gas emitted from the Heat Beam Cylinder collides with a glass substrate moving at a constant speed, it transforms amorphous Si on the substrate into crystalline Si. It also allows for high-temperature sintering of coating films on PET films.