The orbitals of atomic vacancy defects in silicon are widely spread around, possessing a large electric quadrupole and showing significant quadrupole-strain interactions. Therefore, an extremely low concentration of atomic vacancies, as scarce as one in ten billion silicon atoms, can be observed from the low-temperature softening of the elastic constants.
Research Achievements
Research on Observing Atomic Vacancy Defects in Silicon Wafers
Test Wafers
Feb 13, 2024
An attempt to measure the speed of sound at ultra-low temperatures to determine the concentration of atomic vacancies in silicon wafers was made at Niigata University. Our company was responsible for manufacturing the SAW (Surface Acoustic Wave) devices needed for this purpose. A unique phenomenon of silicon softening near absolute zero due to the interaction of atomic vacancies was introduced in the paper.
Content of This Article
Research on observing atomic vacancy defects in silicon wafers, which affect the cost of the semiconductor industry
History of silicon wafers and crystal defect control that support all industries
Miniaturization of device structure
Study of atomic vacancy defects on the surface layer of silicon wafers using surface acoustic waves
Toward Elucidating Quantum States: Analysis through Low-Temperature Physics Experiments and Theory at Niigata University
Philtech manufactured surface acoustic wave wafers for observing atomic vacancy defects in the surface layer.
Design of Surface Acoustic Wave Transceiver Cells
High-Precision Measurement of Sound Speed
Niigata University analyzed the effect of vacancy defects softening the crystal to measure their concentration.
An era is coming where advanced devices can be developed using wafers specified for vacancy concentration.
Research on observing atomic vacancy defects in silicon wafers, which affect the cost of the semiconductor industry
History of silicon wafers and crystal defect control that support all industries
Miniaturization of device structure
Study of atomic vacancy defects on the surface layer of silicon wafers using surface acoustic waves
Overview
Background and Challenges
Understanding the atomic vacancies in the surface layer of boron-doped silicon wafers is critical for advancing semiconductor manufacturing technology and ensuring the yield of state-of-the-art miniaturized LSTs (Large Scale Integration Technologies) and high-performance power devices.
Objective and Aim
By utilizing Surface Acoustic Waves (SAW), we observed the low-temperature softening and magnetic field dependency of the elastic constant Cs of Rayleigh waves propagating through the wafer surface layer. This research advances the study of the quantum states of atomic vacancy orbitals. It contributes to the development of innovative technology for the quantitative evaluation of atomic vacancies in the wafer surface layer, which is the foundational material for semiconductor devices.
Evaluation of Atomic Vacancies by SAW
The elastic constant Cs of surface acoustic waves shows softening at low temperatures, and its magnitude is proportional to the concentration of atomic vacancies in the silicon wafer surface layer. The practical application of atomic vacancy evaluation technology using surface acoustic waves can contribute to the development of next-generation high-quality silicon wafers that indicate atomic vacancy concentrations.
Toward Elucidating Quantum States: Analysis through Low-Temperature Physics Experiments and Theory at Niigata University
Philtech manufactured surface acoustic wave wafers for observing atomic vacancy defects in the surface layer.
Design of Surface Acoustic Wave Transceiver Cells
High-Precision Measurement of Sound Speed
Niigata University analyzed the effect of vacancy defects softening the crystal to measure their concentration.
An era is coming where advanced devices can be developed using wafers specified for vacancy concentration.
