Line & Space patterns can be formed using SADP (Self-Aligned Double Patterning) on 300mm wafers.
For example, a 25nm L&S pattern of SiO is formed using a SiN core pattern.
The following evaluations can be made during this process:
SADP 25nm Line & Space Pattern Wafers
SADP 25nm Line & Space Pattered Wafers
- SiO coverage evaluation using SiN core pattern
- Performance evaluation of SiO etchback
- Removal evaluation of SiN core film
Process Flow
Schematic of cross-sectional image
CD SEM image