Deep silicon etching and silicon anisotropic wet etching (using KOH TMAH, etc.) are possible.
Wafer sizes are compatible with 100mm 150mm 200mm 300mm.
Processing of minute dimensions may be a development project, so please contact us for details.
MEMS Processing Wafers
MEMS Processing Wafers
1. Preparation of silicon Bosch etching pattern
The SEM photo below is an example of a pattern formed on a silicon substrate using Bosch etching.
The technical difficulty of manufacturing varies depending on pattern dimensions and pattern density, so please contact us for details.
Trench Pattern
Width: 0.4 um
Depth: 18 um
Dense Pillar Pattern
Diameter: 50um
Depth: 340um
Sparse Pillar Pattern
Diameter: 60um
Depth: 200um
2. Preparation of silicon anisotropic wet etching pattern
The above SEM photo is an example of wet etching with TMAH using a silicon substrate with a (100) surface orientation.
Because the etching rate of the (111) silicon surface is slow, a sloped surface is formed.
3. Machining for making through holes in 300mm silicon wafers
A through hole can be formed in a silicon substrate (diameter 300mm, thickness 775um).
It is an inexpensive processing technology because it does not use dry etching.