MEMS Processing Wafers

MEMS Wafer Processing

Philtech provides MEMS processing, including deep silicon etching and anisotropic wet etching, on 100mm, 150mm, 200mm, and 300mm wafers. The structures shown are a selection of processing examples; other shapes and processing requirements can also be discussed.

MEMS (Micro Electro Mechanical Systems) combine microscopic mechanical structures with electrical functions. They are used in sensors, actuators, as well as other devices.

MEMS fabrication combines processes such as film deposition, photolithography, and etching to create microstructures. The processing method must be selected according to the shape and dimensions of features such as trenches, holes, and pillars formed in the substrate.

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Deep Silicon Etching

Deep silicon etching forms deep trenches, holes, and similar features in silicon substrates. The Bosch process, a type of DRIE (Deep Reactive Ion Etching), alternates etching with the formation of a protective film on the sidewalls.

This enables high-aspect-ratio structures with large depths relative to their widths. The examples below show trenches and pillars formed by Bosch etching. Processing difficulty varies with pattern dimensions and density.

Bosch Etching Examples

Trench pattern formed by Bosch etching; trench width: 0.4µm; trench depth: 18µm
Trench Pattern
Width 0.4µm, Depth 18µm
Dense pillar pattern formed by Bosch etching; pillar diameter: 50µm; pillar depth: 340µm
Dense Pillar Pattern
Diameter 50µm, Depth 340µm
Sparse pillar pattern formed by Bosch etching, with a diameter of 60µm and a depth of 200µm
Sparse Pillar Pattern
Diameter 60µm, Depth 200µm

Trench and Hole Pattern Examples

The following product pages also present examples of trenches and holes in silicon, including pattern shapes, layouts, and cross-sectional observations. Processing methods differ by product.

Anisotropic Wet Etching of Silicon

This method uses chemicals such as KOH (potassium hydroxide) or TMAH (tetramethylammonium hydroxide) and takes advantage of differences in etch rate between silicon crystal planes. It is used to form structures with inclined surfaces along crystal planes.

The examples below show wet etching with TMAH on a (100)-oriented silicon substrate. The slower etch rate of the (111) planes produces inclined surfaces.

TMAH Wet Etching Examples

Example of TMAH wet etching on a (100) silicon substrate
Example of TMAH wet etching on a (100) silicon substrate
Example of TMAH wet etching on a (100) silicon substrate

Mechanical Pattern Formation

Blasting is one method for forming patterns such as holes and trenches.

Mechanical Through-Machining of a 300mm Silicon Wafer

This example shows through-holes with a diameter of 250µm formed in a silicon substrate with a diameter of 300mm and a thickness of 775µm. The technique offers low-cost processing because it does not use dry etching.

Overview of mechanical through-machining of a silicon wafer
Overview of Mechanical Through-Machining
Examples of mechanically machined through-holes and through-trenches in a silicon substrate
Hole and Trench Examples (the 250µm Label Refers to the Trench)