CMP Evaluation Wafers

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Test Wafers
CMP Evaluation Wafers

CMP Test Wafers

CMP test wafers are used to assess slurries, polishing equipment, and process conditions for CMP (chemical mechanical polishing). They help assess post-polish planarity and differences in results across patterns.

They are used to compare dishing (recesses in interconnects) and erosion (material loss in dense interconnect regions) across different line widths, spaces, and pattern densities, and to assess removal rates and film selectivity.

Philtech supplies patterned wafers for CMP testing of Cu (copper) interconnects and STI (shallow trench isolation).

CU CMPCu CMP Testing

We supply patterned wafers made with the CMP-4 and 754/854 standard masks.

STI CMPSTI CMP Testing

We supply patterned wafers made with the PT004 standard mask for CMP testing of oxide fill.

The dimensions shown are design values for the standard masks. Wafer diameter, film stack, and film thickness can be discussed to suit your test conditions.

Discuss Your CMP Test Wafer Needs

Browse Standard Masks

CMP-4 | Cu CMP, Minimum Line Width 80nm PT004 | STI CMP, Various Pattern Shapes and Densities, Minimum Feature Size 0.18um 754/854 | Cu CMP, Trenches 0.18~100µm

CMP-4 | Standard Mask for Cu CMP Testing

CMP-4 is a standard mask for assessing differences in step height after Cu CMP, using interconnect patterns with different line widths and spaces.

Basic Information

Item	Details
Mask Layout	20.8mm × 20.8mm
Minimum Line Width	80nm (0.08µm)

Full layout of the CMP-4 standard mask for Cu CMP testing — CMP-4 Full Mask Layout

Pattern Dimensions

Line Width (µm)	Space (µm)
0.08	0.08, 0.13, 0.18, 0.35
0.09	0.09, 0.13, 0.35
0.13	0.13, 0.2, 0.5
0.18	0.18, 0.28, 0.7
0.25	0.25, 0.6, 1
0.5	0.5, 2
1	1, 4
2.5, 3, 5, 10, 25, 50, 100	Same as line width (1:1)

Intermediate dimensions are also available beyond those listed in the table. The mask includes regions with and without dummy patterns, different interconnect lengths, and isolated interconnects with wider spacing from surrounding lines.

Example Film Stack

This is an example wafer structure for Cu CMP testing. Film materials and thicknesses can be discussed to suit your desired structure.

Electroplated Cu
0.6 µm

Cu Seed
60 nm

Ta/TaN
10 nm each

P-SiO/BD
200~300 nm

Example CMP-4 Film Stack (Schematic, Not to Scale)

PT004 | Standard Mask for STI CMP Testing

PT004 is a standard mask for CMP testing of STI oxide fill. Regions with different pattern shapes, widths, spaces, and densities allow comparison of step heights after CMP.

Basic Information

Item	Details
Shot Size	20mm × 20mm
Minimum Feature Size	0.18µm

Pattern layout of the PT004 standard mask for STI CMP testing — PT004 Full Mask Layout

Example Patterns

These are plan-view schematics of checker, square, mesh, and line-and-space patterns. Blue areas indicate the patterns.

Plan-view schematic of the PT004 checker pattern, with squares in a checkerboard arrangement; corresponds to the example with a width of 1µm, space of 1µm, and density of 50% — Checker

Plan-view schematic of the PT004 square pattern, with separated squares at equal intervals; corresponds to the example with a width of 0.5µm and space of 0.62µm — Square

Plan-view schematic of the PT004 mesh pattern, with thicker grid lines for higher density — Mesh

Plan-view schematic showing 1 PT004 line-and-space pattern with equal line widths and spaces — Line and Space

Representative Widths, Spaces, and Densities

Pattern	Width / Space [µm] (Density)
Checker	1/1, 10/10, 100/100(all 50%)
Square	0.5/0.62(20%), 0.7/0.4(40%), 1/0.3(60%)
Mesh	0.2/1.8(19%), 0.2/0.8(36%), 0.2/0.3(64%), 0.5/0.34(84%)
Line and Space	50% Density0.18/0.18, 1/1, 10/10, 25/25, 100/100, 900/900
Line and Space	Other Densities5/45(10%), 15/35(30%), 35/15(70%), 45/5(90%)

Additional width and space combinations are available beyond those listed. Line-and-space densities range from 10~90% in 10% increments, including densities not shown in the table.

Processing Example | Cross-Sectional SEM after Si Etching

These cross-sectional SEM images show the wafer after Si etching, before oxide fill. Dimensions shown are example measurements at the imaged locations.

Cross-sectional SEM of PT004 after Si etching, with measurements at the imaged location — Cross-Sectional SEM with Measurements

Cross-sectional SEM of PT004 after Si etching and before oxide fill — Cross-Sectional SEM

754/854 | Standard Masks for Cu CMP Testing

754 and 854 are standard masks for Cu CMP testing. They allow comparison of polishing results across different line widths, spaces, and pattern densities.

Item	Details
Mask	754/854
Trench Width	0.18~100 µm

Chip layout of the 754 standard mask for Cu CMP testing — 754 Chip Layout

Processing Example after Cu Plating

The photograph below shows an example of a full 754 patterned wafer after Cu plating. It illustrates a processed Cu test wafer; it is not a cross-section after CMP.

Please let us know your desired structure, including dielectric materials and thicknesses and Cu plating thickness.