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In 1985, we successfully achieved heteroepitaxial growth of 3C-SiC on Si(111) substrates tilted by 4 degrees in the <211> direction. This technique of crystal growth on off-angle substrates has contributed to the commercialization of high-power devices using GaN and SiC materials.

We attempted to create an antenna on 0.15um cubic Si powder that resonates with close proximity high-frequency. By mixing high-frequency resonant powder into paint or similar substances, it is possible to create paints that resonate at different frequencies. We considered the application of using this as an ID paint.