Philtech will do consulting based on heteroepitaxial growth experience of compound Semiconductors on off-axial substrate.
Research Achievements
Heteroepitaxial Growth of SiC on Si(111) Off-Angle Substrates
All
Feb 13, 2024
In 1985, we successfully achieved heteroepitaxial growth of 3C-SiC on Si(111) substrates tilted by 4 degrees in the <211> direction. This technique of crystal growth on off-angle substrates has contributed to the commercialization of high-power devices using GaN and SiC materials.
Content of This Article
Invention of heteroepitaxial growth on an off-axial substrate
Paper: Characteristics of β-SiC Films Grown from the SiHCl3-C3H8-H2 System
Paper of Characteristics of β-SiC Films Grown from an SiHCl3-C3H8-H2 System
Paper of Heteroepitaxial β-SiC on Si
US Airforce reported this off-axial SiC technology in 1993 with other technologies of SiC and GaN in Japan.
Technology references
- Origin of ‘off-axial substrate crystal growth ’ was described in Furumura's doctoral thesis:
A mixed crystal system of ZnTe, ZnSe, and ZnS in 1978. - SiC Heteroepitaxial growth on an off-axial (111) Si substrate was filed by Fujitsu Ltd. as a Japan Patent in 1985.
- Paper of Heteroepitaxial β-SiC on off-axial Si substrate from a SiHCl3-C3H8-H2 system was published in 1986.
Denshi Tsushin Gakkai Ronbunshi 1986-06, Vol.69-C, No.6; pp.705~714. - Translated paper in English was published in 1987.
Electronics and Communications in Japan Part2 Vol.70, No.5, 1987. - Paper of Heteroepitaxial β-SiC on Si was published in 1988.
Journal of the Electrochemical Society, Vol.135, No.5, May 1988. - US Airforce reported this off-axial SiC technology in 1993 with other technologies of SiC and GaN in Japan. Three researchers in the report won the Nobel Prize in 2014.
Invention of heteroepitaxial growth on an off-axial substrate
Paper: Characteristics of β-SiC Films Grown from the SiHCl3-C3H8-H2 System
Paper of Characteristics of β-SiC Films Grown from an SiHCl3-C3H8-H2 System
Paper of Heteroepitaxial β-SiC on Si
US Airforce reported this off-axial SiC technology in 1993 with other technologies of SiC and GaN in Japan.
