Hall Pattern Wafers | Service (Product)

Philtech Services

STANDARD STOCKIn-Stock Wafers

Typical lead time to ship in-stock wafers is within 1 week.

CUSTOM PROCESSCustom Wafer Processing

Trench and hole patterns can be formed by etching, using existing masks, newly fabricated masks, or maskless exposure with direct-write equipment. We support 4~12 inch wafers as well as chips.

Philtech offers both in-stock wafers and custom wafer processing.

What Are Hole-Patterned Wafers?

Hole-patterned wafers are test wafers with holes formed in a substrate or film. They are used to compare conditions for processes such as deposition, plating, etching, and inspection.

Cross-sectional observation of the hole tops, sidewalls, and bottoms enables comparison of film coverage, fill quality, and etched profiles.

ALD / CVD

Observe the films at the top, sidewalls, and bottom to compare the effects of deposition conditions.

PVD

Examine cross-sections of the deposited film inside holes to compare coverage.

Cu Plating

Compare Cu fill quality and the occurrence of seams and voids.

Inspection

Use patterns with known dimensions and layouts to evaluate inspection equipment.

Evaluation Example | PVD-Cu Film Coverage

This example evaluates PVD-Cu film coverage using a TEG fabricated by Philtech.

Cross-sectional SEM images of PVD-Cu films on 0.14 and 0.16 micrometer trench patterns — 0.14µm Trench Pattern0.16µm Trench Pattern

Evaluation Example | ALD Films

This example compares the bottom coverage of 2 ALD films using high-aspect-ratio holes with an aspect ratio of approximately 8.

Cross-sectional observation example of ALD films in high-aspect-ratio holes — Aspect ratio: approximately 8

Evaluation Example | Cu Plating

This example uses cross-sectional SEM images of 20 µm holes to compare void formation under different Cu plating conditions.

Cross-sectional example of Cu plating in a 20 micrometer hole without a void — Depth 54 µm / width 20 µm

Cross-sectional example of Cu plating in a 20 micrometer hole with a void — Hole size 20 µm

Contact us to discuss hole-patterned wafers.

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8-inch Hole-Patterned Wafer (PT007)

8 INCH / TSV EVALUATION

PT007 is a 200 mm TSV (Through-Silicon Via) evaluation wafer with holes and trenches arranged within 1 chip. The holes have design dimensions of 10~30 µm, while the cross-sectional observation patterns have design dimensions of 2~40 µm.

Basic Information

Wafer size	8 inches (200 mm)
Wafer orientation feature	Notch
Mask name	PT007
Chip size	19.95 mm × 20 mm
Subchip size	6.65 mm × 10 mm
Mask size	Holes: 10~30 µm / cross-sectional observation: 2~40 µm
Processing method	Non-Bosch Si etching

Patterns and Layout

PT007 Layout

A 19.95 mm × 20 mm chip contains 5 hole-pattern regions grouped by size and 1 region for cross-sectional observation, arranged in 3 columns × 2 rows. The 5 standard regions contain hole patterns; the lower-right region for cross-sectional observation contains 2~40 µm hole and trench patterns.

PT007 GDS layout with chip boundaries, holes, and trenches color-coded, and the lower-right region marked for cross-sectional observation — PT007 | Lower right: cross-sectional observation / HOLE: light blue / TRENCH: orange / gray lines: chip and region boundaries

PT007 includes square and octagonal hole patterns.

Each nominal hole size has the following 4 center-to-center pitch options.

Nominal hole size	Center-to-center pitch
10 µm	17／20／30／100 µm
15 µm	25／30／45／150 µm
20 µm	34／40／60／200 µm
25 µm	43／50／75／250 µm
30 µm	50／60／90／300 µm

Patterns for Cross-Sectional Observation

Holes

Square: 2~40 µm
8-sided: 5~40 µm

Trenches

Width 2~40 µm
Length 2700 µm
Located in the lower-right region for cross-sectional observation

Arrangement

The 5~40 µm holes are arranged in a staggered array. The horizontal pitch is 3 times the nominal hole size.

The 2 µm square holes have 2 center-to-center pitch options: 4 µm and 6 µm. The dimensions listed are GDS design dimensions and may differ from the dimensions, depths, and tolerances after fabrication.

Observation Results

Note: The following are historical measurements of wafers fabricated under conditions broadly similar to those of current stock. Values may differ slightly from those of current in-stock wafers.

Measured Values

Holes

Wafer Center

Mask size	Depth	Top size	Bottom size
2	24.2	Not recorded	1.9
5	36.9	5.3	4.2
10	47.0	10.6	9.6
20	54.2	21.7	20.2

Unit: µm

Wafer Edge

Mask size	Depth	Top size	Bottom size
2	24.5	2.4	1.8
5	38.0	5.8	4.3
10	48.2	11.1	9.2
20	54.6	21.7	19.9

Unit: µm

Trenches

Wafer Center

Mask size	Depth	Top size	Bottom size
2	36.1	2.5	1.8
5	48.4	6.0	4.4
10	57.3	11.1	9.6
20	61.4	22.0	21.0

Unit: µm

Wafer Edge

Mask size	Depth	Top size	Bottom size
2	36.1	2.6	1.4
5	48.8	6.1	4.0
10	57.8	11.6	9.2
20	61.8	22.8	20.2

Unit: µm

Representative Cross-Sectional SEM Images (Design Dimensions: 2 and 10 µm)

Cross-sections of holes and trenches with design dimensions of 2 µm and 10 µm are shown for the wafer center and edge.

Design dimension: 2 µm

Holes

Cross-sectional SEM of a 2 micrometer hole at the PT007 wafer center — Depth 24.2 µm / bottom width 1.9 µm

Cross-sectional SEM of a 2 micrometer hole at the PT007 wafer edge — Depth 24.5 µm / top width 2.4 µm / bottom width 1.8 µm

Trenches

Cross-sectional SEM of a 2 micrometer trench at the PT007 wafer center — Depth 36.1 µm / top width 2.5 µm / bottom width 1.8 µm

Cross-sectional SEM of a 2 micrometer trench at the PT007 wafer edge — Depth 36.1 µm / top width 2.6 µm / bottom width 1.4 µm

Design dimension: 10 µm

Holes

Cross-sectional SEM of a 10 micrometer hole at the PT007 wafer center — Depth 47.0 µm / top width 10.6 µm / bottom width 9.6 µm

Cross-sectional SEM of a 10 micrometer hole at the PT007 wafer edge — Depth 48.2 µm / top width 11.1 µm / bottom width 9.2 µm

Trenches

Cross-sectional SEM of a 10 micrometer trench at the PT007 wafer center — Depth 57.3 µm / top width 11.1 µm / bottom width 9.6 µm

Cross-sectional SEM of a 10 micrometer trench at the PT007 wafer edge — Depth 57.8 µm / top width 11.6 µm / bottom width 9.2 µm

Hole Pattern Wafers

Philtech Services

What Are Hole-Patterned Wafers?

Evaluation Example | PVD-Cu Film Coverage

Evaluation Example | ALD Films

Evaluation Example | Cu Plating

8-inch Hole-Patterned Wafer (PT007)

Basic Information

Patterns and Layout

PT007 Layout

Patterns for Cross-Sectional Observation

Observation Results

Measured Values

Representative Cross-Sectional SEM Images (Design Dimensions: 2 and 10 µm)