Poly-Si (Polysilicon) Patterned Wafers
Poly-Si (polycrystalline silicon) patterned wafers are fabricated by depositing a Poly-Si film on an insulating film, such as thermal oxide, and patterning it into the specified geometry.
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Contact Us40 nm Fine Pattern Fabrication
The 40 nm pattern is a fabrication example in which a line-and-space (L&S) resist pattern was formed, narrowed by resist trimming, and then used as a mask to transfer the pattern into Poly-Si.
This method produces fine Poly-Si lines.
Principle of Resist Trimming (Slimming)
Resist trimming generally uses an oxygen-containing plasma to etch the patterned resist and reduce its line width.
Etching Poly-Si with the narrowed resist as a mask transfers that line width into the Poly-Si. In the diagrams, CD denotes line width, PR denotes photoresist, and SiO2 denotes thermal oxide.
Resist L&S Patterning
Resist Trimming
Poly-Si Etching
Resist Removal
SEM Images of the 40 nm Pattern
250 nm L&S Pattern Fabrication
The 250 nm L&S pattern is a fabrication example with alternating lines and spaces formed in a thick Poly-Si film.
Cross-Sectional SEM
