Philtech will do consulting based on heteroepitaxial growth experience of compound Semiconductors on off-axial substrate.
研究実績Works
Si(111)斜め基板上へのSiCヘテロ結晶成長
総合
2024年02月13日
＜211＞方向に4℃傾けたSi(111)基板上に3C-SiCをヘテロエピタキシャル成長させることに1985年に成功しました。斜め基板に結晶成長させるこの技術はGaNやSiC材料を使う大電力デバイスの製品化に貢献しました。
この記事の内容
Invention of heteroepitaxial growth on an off-axial substrate
論文：SiHCl3-C3H8-H2系から成長させたβ-SiC膜の特性
Paper of Characteristics of β-SiC Films Grown from an SiHCl3-C3H8-H2 System
Paper of Heteroepitaxial β-SiC on Si
US Airforce reported this off-axial SiC technology in 1993 with other technologies of SiC and GaN in Japan.
Technology references
- Origin of ‘off-axial substrate crystal growth ’ was described in Furumura's doctoral thesis:
A mixed crystal system of ZnTe, ZnSe, and ZnS in 1978. - SiC Heteroepitaxial growth on an off-axial (111) Si substrate was filed by Fujitsu Ltd. as a Japan Patent in 1985.
- Paper of Heteroepitaxial β-SiC on off-axial Si substrate from a SiHCl3-C3H8-H2 system was published in 1986.
Denshi Tsushin Gakkai Ronbunshi 1986-06, Vol.69-C, No.6; pp.705~714. - Translated paper in English was published in 1987.
Electronics and Communications in Japan Part2 Vol.70, No.5, 1987. - Paper of Heteroepitaxial β-SiC on Si was published in 1988.
Journal of the Electrochemical Society, Vol.135, No.5, May 1988. - US Airforce reported this off-axial SiC technology in 1993 with other technologies of SiC and GaN in Japan. Three researchers in the report won the Nobel Prize in 2014.
Invention of heteroepitaxial growth on an off-axial substrate
論文：SiHCl3-C3H8-H2系から成長させたβ-SiC膜の特性
Paper of Characteristics of β-SiC Films Grown from an SiHCl3-C3H8-H2 System
Paper of Heteroepitaxial β-SiC on Si
US Airforce reported this off-axial SiC technology in 1993 with other technologies of SiC and GaN in Japan.
